IndiumV3, Main, Repository, bibRecord, 000480

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Identifieur interne : 000480 ( Main/Repository ); précédent : 000479; suivant : 000481

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Auteurs : RBID : Pascal:13-0183957

Descripteurs français

Pascal (Inist)
- Accommodation réseau, RBS, Attaque chimique, Microscopie force atomique, Microstructure, Rugosité, Procédé voie humide, Structure îlot, Transistor mobilité électron élevée, Diffraction RX, Nitrure d'aluminium, Nitrure d'indium, Nitrure de gallium, Hétérostructure, GaN.

English descriptors

KwdEn :
- Aluminium nitride, Atomic force microscopy, Chemical etching, Gallium nitride, Heterostructures, High electron mobility transistor, Indium nitride, Island structure, Microstructure, Mismatch lattice, RBS, Roughness, Wet process, X ray diffraction.

Abstract

Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface roughness of the as-grown material. The profiles of etched samples varied in crack density, giving rise to island-like structures. We found that a possible reason for the preferential etching can be ascribed to the dislocations present in the quaternary layers originating in the underlying GaN. Moreover, the etched material suffers crystal relaxation as confirmed by RSM.

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Pascal:13-0183957

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<author><name sortKey="Brazzini, T" uniqKey="Brazzini T">T. Brazzini</name>
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<author><name sortKey="Gacevic, Z" uniqKey="Gacevic Z">Z. Gacevic</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnologias, Universidad Politécnica de Madrid, ETSI Telecomunicación, Av. Complutense 30</s1>
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<author><name sortKey="Pandey, S" uniqKey="Pandey S">S. Pandey</name>
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<author><name sortKey="Cavallini, A" uniqKey="Cavallini A">A. Cavallini</name>
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<term>Heterostructures</term>
<term>High electron mobility transistor</term>
<term>Indium nitride</term>
<term>Island structure</term>
<term>Microstructure</term>
<term>Mismatch lattice</term>
<term>RBS</term>
<term>Roughness</term>
<term>Wet process</term>
<term>X ray diffraction</term>
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<term>RBS</term>
<term>Attaque chimique</term>
<term>Microscopie force atomique</term>
<term>Microstructure</term>
<term>Rugosité</term>
<term>Procédé voie humide</term>
<term>Structure îlot</term>
<term>Transistor mobilité électron élevée</term>
<term>Diffraction RX</term>
<term>Nitrure d'aluminium</term>
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<term>Hétérostructure</term>
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<front><div type="abstract" xml:lang="en">Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface roughness of the as-grown material. The profiles of etched samples varied in crack density, giving rise to island-like structures. We found that a possible reason for the preferential etching can be ascribed to the dislocations present in the quaternary layers originating in the underlying GaN. Moreover, the etched material suffers crystal relaxation as confirmed by RSM.</div>
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<fA14 i1="01"><s1>Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnologias, Universidad Politécnica de Madrid, ETSI Telecomunicación, Av. Complutense 30</s1>
<s2>28040 Madrid</s2>
<s3>ESP</s3>
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<sZ>3 aut.</sZ>
<sZ>6 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>Developer-based wet chemical etch of nearly lattice-matched InAlGaN/GaN heterostructures (HEMT-like) has been studied in detail by means of Rutherford backscattering spectroscopy, x-ray diffraction, atomic force microscopy and reciprocal space mapping (RSM). Etch isotropy depended on the rms surface roughness of the as-grown material. The profiles of etched samples varied in crack density, giving rise to island-like structures. We found that a possible reason for the preferential etching can be ascribed to the dislocations present in the quaternary layers originating in the underlying GaN. Moreover, the etched material suffers crystal relaxation as confirmed by RSM.</s0>
</fC01>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
</fC03>
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<s5>07</s5>
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<s5>08</s5>
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<fC03 i1="06" i2="X" l="ENG"><s0>Roughness</s0>
<s5>08</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Rugosidad</s0>
<s5>08</s5>
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<s5>09</s5>
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<s5>09</s5>
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<fC03 i1="07" i2="X" l="SPA"><s0>Procedimiento vía húmeda</s0>
<s5>09</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Structure îlot</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Island structure</s0>
<s5>10</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Estructura islote</s0>
<s5>10</s5>
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<fC03 i1="09" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0>
<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="09" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0>
<s5>11</s5>
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<fC03 i1="10" i2="X" l="FRE"><s0>Diffraction RX</s0>
<s5>12</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>X ray diffraction</s0>
<s5>12</s5>
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<s5>12</s5>
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<fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Aluminium nitride</s0>
<s5>15</s5>
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<fC03 i1="11" i2="X" l="SPA"><s0>Aluminio nitruro</s0>
<s5>15</s5>
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<s5>16</s5>
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<s5>16</s5>
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<fC03 i1="12" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>16</s5>
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<fC03 i1="13" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>17</s5>
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<fC03 i1="13" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>17</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>17</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Hétérostructure</s0>
<s5>18</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Heterostructures</s0>
<s5>18</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fN21><s1>168</s1>
</fN21>
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Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri